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The memory drive on the basis of ordering self - organizing structures: – calculated writing density, not less |
1010 bit/cm2 |
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Scanner with parameters:
- scanning field, not less – positioning accuracy |
10 μm 1 nm |
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Electric control circuit, containing in the structure: - embedded processor, - control circuit by the scanner and the probes location, - control circuit by the micromotors, - reading and writing system. Quantity of elements Probes quantity Reading time of elements, s Access time of elements, ms Storage time, years |
1010 103 10-5 1 10 |